1.To be responsible for driving a leading edge process/device development and optimization of RFSOI devices in order to meet scaling, performance, reliability, and manufacturability requirements.

2.To conduct device pcell design, test structure creation and tape out.

3.To perform extensive process and device TCAD simulation using various techniques to optimize device performance and ensuring reliability.

4.To perform device characterization and analysis with the aid of DC-IV bench test.

5.To work with modeling & PDK team for design enablement, model validation and pcell improvement.

1.Solid knowledge in semiconductor device physics, especially: Deep understanding device characteristics and device tuning techniques.

2.Hands-on experience in one of below fields are preferred:
◆TCAD (process & device) simulation and calibration
◆Work under industrial EDA environment (Cadence, Mentor, Synopsys) for layout creation, drc and lvs check.
◆Experienced with advanced RFSOI CMOS technologies.

3.Strong communication and interpersonal skills.

4.Devoted professional: you are diligent and deliberate in your work, leveraging your expertise to deliver results without ego.

5.Avid Learner: you thrive with challenges, seek continuous growth and improvement, and seek data to prove your hypotheses.